• 文献标题:   Remarkably low turn-on field emission in undoped, nitrogen-doped, and boron-doped graphene
  • 文献类型:   Article
  • 作  者:   PALNITKAR UA, KASHID RV, MORE MA, JOAG DS, PANCHAKARLA LS, RAO CNR
  • 作者关键词:   boron, doping, field emission, graphene, nanostructured material, nitrogen, resonant tunnelling
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951
  • 通讯作者地址:   Jawaharlal Nehru Ctr Adv Sci Res
  • 被引频次:   108
  • DOI:   10.1063/1.3464168
  • 出版年:   2010

▎ 摘  要

Field emission studies have been carried out on undoped as well as N- and B-doped graphene samples prepared by arc-discharge method in a hydrogen atmosphere. These graphene samples exhibit very low turn-on fields. N-doped graphene shows the lowest turn-on field of 0.6 V/mu m, corresponding to emission current density of 10 mu A/cm(2). These characteristics are superior to the other types of nanomaterials reported in the literature. Furthermore, emission currents are stable over the period of more than 3 h for the graphene samples. The observed emission behavior has been explained on the basis of nanometric features of graphene and resonance tunneling phenomenon. (C) 2010 American Institute of Physics. [doi:10.1063/1.3464168]