• 文献标题:   Electron-electron interaction, weak localization and spin valve effect in vertical-transport graphene devices
  • 文献类型:   Article
  • 作  者:   LONG MS, GONG YP, WEI XF, ZHU C, XU JB, LIU P, GUO YF, LI WW, LIU GT, LIU LW
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Chinese Acad Sci
  • 被引频次:   5
  • DOI:   10.1063/1.4871983
  • 出版年:   2014

▎ 摘  要

We fabricated a vertical structure device, in which graphene is sandwiched between two asymmetric ferromagnetic electrodes. The measurements of electron and spin transport were performed across the combined channels containing the vertical and horizontal components. The presence of electron-electron interaction (EEI) was found not only at low temperatures but also at moderate temperatures up to similar to 120 K, and EEI dominates over weak localization (WL) with and without applying magnetic fields perpendicular to the sample plane. Moreover, spin valve effect was observed when magnetic filed is swept at the direction parallel to the sample surface. We attribute the EEI and WL surviving at a relatively high temperature to the effective suppress of phonon scattering in the vertical device structure. The findings open a way for studying quantum correlation at relatively high temperature. (C) 2014 AIP Publishing LLC.