• 文献标题:   High quality graphene grown on single-crystal Mo(110) thin films
  • 文献类型:   Article
  • 作  者:   WANG B, ZHANG YH, CHEN ZY, WU YW, JIN Z, LIU XY, HU LZ, YU GH
  • 作者关键词:   graphene, chemical vapor deposition, raman, segregation
  • 出版物名称:   MATERIALS LETTERS
  • ISSN:   0167-577X
  • 通讯作者地址:   Chinese Acad Sci
  • 被引频次:   6
  • DOI:   10.1016/j.matlet.2012.11.088
  • 出版年:   2013

▎ 摘  要

In this paper, the synthesis of high quality graphene on single-crystal Mo(110) films by chemical vapor deposition (CVD) of methane was reported for the first time. X-ray diffraction proves that carbon species had dissolved into the metal. The micro-Raman spectroscopy indicates that the thickness of Mo films, cooling rate and growing time play significant roles in the quality of as-grown graphene films. By optimizing the growth time (15 min) and cooling rate (10 degrees C/s), we achieved high quality graphene films with the small ratio I-G/I-2D approximate to 0.26 and the FWHM(2D) approximate to 30.4 cm(-1) on 200 nm-thick Mo films. Our experiments also suggest that graphene growth on Mo is a dissolution and segregation process as Ni. (C) 2012 Elsevier B.V. All rights reserved.