▎ 摘　　要

Graphene is a single layer of carbon atoms arranged in a hexagonal lattice. The high carrier mobility and mechanical robustness of single layer graphene make it an attractive material for "beyond CMOS" devices. The current work investigates through high-resolution transmission electron microscopy (HRTEM) image simulation the sensitivity of aberration-corrected HRTEM to the different graphene stacking configurations AAA/ABA/ABC as well as bilayers with rotational misorientations between the individual layers. High-angle annular dark field scanning transmission electron microscopy simulation is also explored. Images calculated using the multislice approximation show discernable differences between the stacking sequences when simulated with realistic operating parameters in the presence of low random noise.