• 文献标题:   Ultrasmooth nanocrystalline carbon film induced by low concentration doping: Carbide disorienting graphene nanocrystallite
  • 文献类型:   Article
  • 作  者:   CHEN C, FAN X, DIAO DF
  • 作者关键词:  
  • 出版物名称:   CARBON
  • ISSN:   0008-6223 EI 1873-3891
  • 通讯作者地址:   Shenzhen Univ
  • 被引频次:   0
  • DOI:   10.1016/j.carbon.2019.11.090
  • 出版年:   2020

▎ 摘  要

The fabrication of nanocrystalline films is usually accompanied by undesired surface roughening, which limits their applications in tribology, optics and electronics. Here, we report a technique to reduce the average roughness of graphene nanocrystalline carbon film from 18.3 nm to 0.66 nm by similar to 5 at.% Ti-doping. The surface of the Ti-doped graphene nanocrystalline carbon film stay ultrasmooth from few nanometer thick up to 1 mm thick. Based on the nanostructure characterization, the ultrasmooth mechanism is interpreted that Ti-doping leads to the formation of Ti-C bond, and changes the growth of graphene nanocrystallite from preferred vertical-aligned orientation to random orientation. The ultrasmooth mechanism is general, as shown by similar effects with low concentration doping of Si, Al, Cr, Zr and W. This approach paves a way for fabricating ultrasmooth nanocrystalline carbon films without a requirement of ion-impact-induced downhill current, and significantly improving the hardness of the graphene nanocrystalline carbon film. (C) 2019 Elsevier Ltd. All rights reserved.