• 文献标题:   Patterned Defect Structures Predicted for Graphene Are Observed on Single-Layer Silica Films
  • 文献类型:   Article
  • 作  者:   YANG B, BOSCOBOINIK JA, YU X, SHAIKHUTDINOV S, FREUND HJ
  • 作者关键词:   ultrathin oxide film, silica, silicatene, topological defect, graphene
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Max Planck Gesell
  • 被引频次:   33
  • DOI:   10.1021/nl402264k
  • 出版年:   2013

▎ 摘  要

Topological defects in two-dimensional materials such as graphene are considered as a tool for tailoring their physical properties. Here, we studied defect structures on a single-layer silica (silicatene) supported on Ru(0001) using a low energy electron diffraction, scanning tunneling microscopy, infrared reflection absorption spectroscopy, and photoelectron spectroscopy. The results revealed easy formation of periodic defect structures, which were previously predicted for graphene on a theoretical ground, yet experimentally unrealized. The structural similarities between single-layer materials (graphene, silicene, silicatene) open a new playground for deeper understanding and tailoring structural, electronic, and chemical properties of the truly two-dimensional systems.