▎ 摘　　要

Zinc oxide-graphene quantum dot (ZnO-GQD) hybrid thin films are synthesized by solution processing. Memory devices with Al/ZnO-GQD/Pt structures exhibit reliable bipolar switching performances with an excellent uniform distribution of switching parameters, ultra-low switching voltages, and high ON/OFF ratios. Compared with a pure ZnO-based device, the switching voltages of the Al/ZnO-GQD/Pt device are decreased by 75%, and its coefficient of variation is one order of magnitude lower than that of the pure ZnO-based device. X-ray photoelectron spectroscopy and Raman spectroscopy analyses reveal the reversible redox of GQDs under an applied electric field, which facilitates the formation and rupture of conductive filaments. The reversible exchange of oxygen ions between the GQDs and ZnO under an electric field guides the practical application of such hybrid materials in high-performance nonvolatile memory devices.