▎ 摘　　要

Electronic structures modulation in the antimonene/graphene van der Waals(vdW) heterostructure with an external electric field(E-ext) are investigated by density functional theory calculations. It is demonstrated that weak vdW interactions dominate between antimonene and graphene with their intrinsic electronic properties preserved. Furthermore, the vertical E-ext can control not only the Schottky barrier but also the Schottky contacts (n-type and p-type) and Ohmic contacts (n-type) at the antimonene/graphene interface. Meanwhile, the negative E-ext can shifts the Dirac point of graphene above the Fermi level, resulting in p-type doping in graphene because electrons can easily transfer from the Dirac point of graphene to the conduction band of antimonene. The present study would open a new avenue for application of ultrathin antimonene/graphene heterostructures in future nano- and optoelectronics.