▎ 摘　　要

Graphene nanodiscs (GNDs), functionalized using NH3 plasma, as charge trapping sites (CTSs) for nonvolatile memory applications have been investigated in this study. The fabrication process relies on the patterning of Au nanoparticles (Au-NPs), whose thicknesses are tuned to adjust the GND density and size upon etching. A GND density as high as 8 x 10(11) cm(-2) and a diameter of approximately 20 nm are achieved. The functionalization of GNDs by NH3 plasma creates N-H+ functional groups that act as CTSs, as observed by Raman and Fourier transform infrared spectroscopy. This inherently enhances the density of CTSs in the GNDs, as a result, the memory window becomes more than 2.4 V and remains stable after 10(4) operating cycles. The charge loss is less than 10% for a 10-year data retention testing, making this low-temperature process suitable for low-cost non-volatile memory applications on flexible substrates. (C) 2016 Elsevier Ltd. All rights reserved.