▎ 摘　　要

Chemical, mechanical, thermal and/or electronic properties of bulk or low-dimensional materials can be engineered by introducing structural defects to form novel functionalities. When using particles irradiation, these defects can be spatially arranged to create complex structures, like sensing circuits, where the lateral resolution of the defective areas plays a fundamental role. Here, we show that structural defects can be patterned by low energy electrons in monolayer graphene sheets with lateral resolution strongly defined by the surface of the supporting substrate. Indeed, two-dimensional micro-Raman mapping revealed that the surroundings of irradiated areas contain unintentional defects of the graphene lattice, whose density depends on the methods exploited to clean the supporting surface. By combining Monte Carlo simulations with the analysis of the graphene Raman modes, we attributed these structural modifications mainly to the action of back-scattered electrons and back scattered electrons-created secondaries. The latter create reactive radicals at the interface between graphene and the supporting surface that affect the lateral resolution of the defective areas. Hence, defects pattern can be produced with high lateral resolution by removing any organic contaminants from the supporting surface and by reducing the thickness of the substrate, in order to minimize the number of back-scattered and secondary electrons.