▎ 摘　　要

By depositing a cl-wave superconductor (using proximity method) on the top of graphene grown on a substrate-induced bandgap (such as a SiC substrate), a d-wave superconductor caused by the massive Dirac electrons can be fabricated. Using the BTK theory, the tunneling conductance in a gapped graphene N/d-wave superconductor junction, where N is a normal gapped graphene, is studied. This work focuses on the influence of d-wave pairing on the conductance of the junction. In this result, for conductance G/G(N) plotted versus either the biased voltage V or the cl-wave superconducting orientation angular alpha, a sharp conductance peak like an impulse function can be observed due to increasing the Dirac energy gap. The maximum conductance peak G(max) is also enhanced by increasing the electrostatic potential U in superconductor-electrode, giving rise to G(max)/G(N)=2 for increasing U ->infinity. This sharp conductance peak occurs related to the condition of eV = Delta cos(2 alpha). The unit step conductance in this junction, G/G(N) = 2 Theta(U), is found for alpha = pi/4 and eV/Delta = 0 when E-F-mv(F)(2)-> 0. This is unlike a unit step conductance in a gapped graphene N/s-wave superconductor junction which was recently observed for eV/Delta = 1. (C) 2009 Elsevier B.V. All rights reserved.