▎ 摘　　要

Over the two past decades, graphene has attracted a great deal of attention for use in state-of-the-art electronic devices. Its two-dimensional structure and good electrical and thermal conductivity have led researchers to favor this material as a nanoscale transistor channel for post-silicon devices. Passivation of graphene edges is essential for obtaining a suitable bandgap. Two well-known passivation types are accomplished by hydrogen and nitrogen atoms. Because of the immature fabrication process, graphene sheets have unwanted defects such as the Stone-Wales (SW) defect. In this paper, the role of these passivation types is investigated in a graphene-based FET including a SW defect. A defect-engineered structure represents an opposite channel conductivity for these passivation types. This peculiar behavior of I-V characteristics is verified by metrics such as local density of states and transmission pathways. Furthermore, it is shown that the passivation type not only can lead to opposite channel conductivity but also can reduce cut-off frequency variations in the presence of a SW defect.