• 文献标题:   Phonon Mean Free Path in Few Layer Graphene, Hexagonal Boron Nitride, and Composite Bilayer h-BN/Graphene
  • 文献类型:   Article
  • 作  者:   GHOLIVAND H, DONMEZER N
  • 作者关键词:   graphene, hexagonal boron nitride hbn phonon mode, phonon mean free path mfp, thermal conductivity, 2d material
  • 出版物名称:   IEEE TRANSACTIONS ON NANOTECHNOLOGY
  • ISSN:   1536-125X EI 1941-0085
  • 通讯作者地址:   Middle East Tech Univ
  • 被引频次:   2
  • DOI:   10.1109/TNANO.2017.2672199
  • 出版年:   2017

▎ 摘  要

In this study, ab-initio calculations were performed to obtain the phonon dispersions of seven different structures: single layer graphene, bilayer graphene, graphite, single layer h-BN, bilayer h-BN, bulk h-BN, and finally composite bilayer h-BN/graphene. Using these dispersions specific heat, group velocity, and single mode relaxation times of phonons were obtained to calculate their thermal conductivities, and mean free paths at room temperature. Calculated variables were used to understand the effects of additional layers to thermophysical properties, phonon mode contributions to thermal conductivity, and the limits for ballistic-diffusive heat transfer of all seven structures. Finally, based on the obtained data, thermal properties of the composite bilayer h-BN/graphene were investigated and compared to those of few layer graphene and h-BN structures.