• 文献标题:   An Anisotropic Etching Effect in the Graphene Basal Plane
  • 文献类型:   Article
  • 作  者:   YANG R, ZHANG LC, WANG Y, SHI ZW, SHI DX, GAO HJ, WANG EG, ZHANG GY
  • 作者关键词:  
  • 出版物名称:   ADVANCED MATERIALS
  • ISSN:   0935-9648
  • 通讯作者地址:   Chinese Acad Sci
  • 被引频次:   183
  • DOI:   10.1002/adma.201000618
  • 出版年:   2010

▎ 摘  要

A highly controllable, dry, anisotropic etching technique for graphene sheets has been achieved using hydrogen plasma etching. Zigzag edge formation was achieved by starting the etching at edges and defects and depends strongly on crystallographic orientation of the graphene. This dry, anisotropic etching approach combined with the standard lithographic technique is ideal for scalable graphene tailoring because the etching rates can be precisely controlled and the quality of the graphene can be preserved.