▎ 摘　　要

Charge-carrier capture/emission processes proceeding with the participation of localized states in graphene oxide (GO) in test structures of Au/SiO2/GO/SiO2/Si were examined by charge deep-level transient spectroscopy (Q-DLTS). Two groups of traps capable of capturing both electrons and holes in GO were detected. The energy levels of these groups with reference to the electronic band structure of Si were found to be at E-V + 0.75 eV (E-C - 0.37 eV) and E-V + 0.55 eV (E-C - 0.55 eV). Such levels are proposed to be inherent to graphene islands in which charge carriers are emitted from energy levels in the vicinity of the Dirac point. Two groups of levels are suggested to be attributed to graphene islands, with and without p-doping with oxygen.