▎ 摘 要
By applying the Green's function technique and using the tight-binding Hamiltonian model, thermodynamic properties of gapped graphene-like structures, including silicon carbide (SiC), boron nitride (BN) and beryllium monooxide (BeO) in the presence of a transverse magnetic field are investigated. In fact, we have studied electronic density of states (DOS), electronic heat capacity (EHC) and magnetic susceptibility (MS) in order to investigate the dynamics of Dirac fermions. At an applied certain value of magnetic field, the band gap width increases for SiC, BN and BeO structures with respect to the gapless graphene and a double peak appears in DOS with increasing of quantum states. On the other hand, the band gap size decreases with magnetic field. We have found that EHC and MS increase slightly at low temperatures with gap and magnetic field. Also, EHC and MS reach to their maximum value at a critical temperature point while an increase behavior has been observed for high temperatures significantly.