• 文献标题:   Formation of p-n-p junction with ionic liquid gate in graphene
  • 文献类型:   Article
  • 作  者:   HE X, TANG N, GAO L, DUAN JX, ZHANG YW, LU FC, XU FJ, WANG XQ, YANG XL, GE WK, SHEN B
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Peking Univ
  • 被引频次:   6
  • DOI:   10.1063/1.4870656
  • 出版年:   2014

▎ 摘  要

Ionic liquid gating is a technique which is much more efficient than solid gating to tune carrier density. To observe the electronic properties of such a highly doped graphene device, a top gate made of ionic liquid has been used. By sweeping both the top and back gate voltage, a p-n-p junction has been created. The mechanism of forming the p-n-p junction has been discussed. Tuning the carrier density by ionic liquid gate can be an efficient method to be used in flexible electronics. (C) 2014 AIP Publishing LLC.