▎ 摘　　要

We report a nanoscale resistive random access memory (RRAM) device consisting of a NiO nanodot and graphene nanoribbon (GNR) nanogap electrodes. The GNR nanogap was established by an electroburning process induced by applying voltage ramp stress between the two ends of the GNR. A NiO nanodot was then deposited between the nanogapped GNR electrodes by an elaborately controllable dip pen lithography method using a nickel carbonate [Ni-2(CO3)(OH)(2)] solution. The nanoscale GNR/NiO/GNR RRAM device exhibited reliable unipolar resistive switching characteristics with low SET/RESET voltages and currents, which might be the result of its miniaturized size and well-defined Ohmic contacts between the NiO nanodot and GNR electrodes. (C) 2014 Elsevier Ltd. All rights reserved.