• 文献标题:   Breakdown Current Density of CVD-Grown Multilayer Graphene Interconnects
  • 文献类型:   Article
  • 作  者:   LEE KJ, CHANDRAKASAN AP, KONG J
  • 作者关键词:   current density, graphene, interconnect
  • 出版物名称:   IEEE ELECTRON DEVICE LETTERS
  • ISSN:   0741-3106
  • 通讯作者地址:   MIT
  • 被引频次:   54
  • DOI:   10.1109/LED.2011.2108259
  • 出版年:   2011

▎ 摘  要

Graphene wires have been fabricated from large-area multilayer graphene sheets grown by chemical vapor deposition. As the methane concentration increases, a larger percentage of thicker graphene layers are grown. The multilayer graphene sheets have an average thickness of 10-20 nm with sheet resistances between 500 and 1000 Omega/sq. The sheet resistance shows a strong correlation with the average surface roughness. This letter reports measured breakdown current densities up to 4 x 10(7) A/cm(2), where resistive heating is proposed as the main breakdown mechanism. Increasing the uniformity of the graphene layers is important in achieving a higher breakdown current density.