• 文献标题:   Quantized four-terminal resistances in a ferromagnetic graphene p-n junction
  • 文献类型:   Article
  • 作  者:   XU L, AN J, GONG CD
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF PHYSICSCONDENSED MATTER
  • ISSN:   0953-8984 EI 1361-648X
  • 通讯作者地址:   Nanjing Univ
  • 被引频次:   0
  • DOI:   10.1088/0953-8984/24/22/225301
  • 出版年:   2012

▎ 摘  要

The quantum Hall and longitudinal resistances in four-terminal ferromagnetic graphene p-n junctions under a perpendicular magnetic field are investigated. In the Hall measurement, the transverse contacts are assumed to be located at the p-n interface to avoid the mixing of edge states at the interface and the resulting quantized resistances are then topologically protected. According to the charge carrier type, the resistances in a four-terminal p-n junction can be naturally divided into nine different regimes. The symmetric Hall and longitudinal resistances are observed, with many new robust quantum plateaus revealed due to the competition between spin splitting and local potentials.