• 文献标题:   Linear magnetoresistance in compensated graphene bilayer
  • 文献类型:   Article
  • 作  者:   VASILEVA GY, SMIRNOV D, IVANOV YL, VASILYEV YB, ALEKSEEV PS, DMITRIEV AP, GORNYI IV, KACHOROVSKII VY, TITOV M, NAROZHNY BN, HAUG RJ
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:   Leibniz Univ Hannover
  • 被引频次:   17
  • DOI:   10.1103/PhysRevB.93.195430
  • 出版年:   2016

▎ 摘  要

We report a nonsaturating linear magnetoresistance in charge-compensated bilayer graphene in a temperature range from 1.5 to 150 K. The observed linear magnetoresistance disappears away from charge neutrality, ruling out the traditional explanation of the effect in terms of the classical random resistor network model. We show that experimental results qualitatively agree with a phenomenological two-fluid model taking into account electron-hole recombination and finite-size sample geometry.