▎ 摘　　要

Electronic properties of gapped graphene structure taking into account the effects of interaction between electrons and Einstein phonons have been addressed. Specially we study the temperature dependence of electrical conductivity and density of states of the structure. The effects of gap parameter, magnetic field and electron doping on electrical conductivity of the system have been studied. Gap parameter is defined as the on-site energy difference of atoms on two different sublattices of honeycomb structure. Green's function method has been implemented to obtain electronic density of states of the system in the context of Holstein model Hamiltonian. One loop electronic self-energy of the model Hamiltonian has been obtained in order to find interacting electronic Green's function. The electrical conductivity of graphene structure in the presence of electron-phonon coupling can be readily found using interacting Green's function based on Kubo formula. We present the numerical results of energy dependence of density of states for different values of gap parameter and magnetic field in the presence of Holstein phonons. Finally the temperature dependence of electrical conductivity of gapped graphene structure due to electron phonon interaction and magnetic has been investigated. Our results show turning on magnetic field leads to appear double van Hov singularity for each value of electron phonon coupling.