• 文献标题:   Vacant defect and nitrogen doping effects on the interface of graphene/ Cu composites: Computational and experimental evaluation
  • 文献类型:   Article
  • 作  者:   LIU L, BAO R, ZHAO WM, LIU P, YI JH, GE ZH, LING SL
  • 作者关键词:   graphene, interfacial bonding, vacancy, nitrogen doping, cu composite
  • 出版物名称:   JOURNAL OF ALLOYS COMPOUNDS
  • ISSN:   0925-8388 EI 1873-4669
  • 通讯作者地址:  
  • 被引频次:   3
  • DOI:   10.1016/j.jallcom.2022.164531 EA MAR 2022
  • 出版年:   2022

▎ 摘  要

To explore an efficient way of modifying carbon nanomaterials to improve the interfacial bonding with the Cu matrix, the interaction between Cu and pristine graphene, single-and double-vacant defect graphene, and nitrogen-doped graphene was systematically investigated by density functional theory (DFT) calcula-tions. The electronic structure, including Bader charge and charge density differences, reveals that the existence of vacancies and nitrogen doping are beneficial for the transfer of electrons at the interface, mainly due to the enhanced binding energy and their intense interaction with Cu atomic orbitals. Pyridine -N and pyrrole-N are more capable of coupling with the interfacial Cu atoms, suggests a vital role of nitrogen doping in the improvement of the mechanical and electrical properties of graphene/Cu composites. To validate our computational prediction, heat-treated carbon polymer dot (CPD), which can be regarded as nitrogen-rich graphene, were employed to prepare bulk CPD/Cu composites. The mechanical performance was significantly better than that of the pure Cu matrix, proves that nitrogen doping could effectively improve C/Cu interface bonding. This research provided a theoretical and experimental basis for the pre-paration of advanced Cu matrix composites.(c) 2022 Elsevier B.V. All rights reserved.