▎ 摘　　要

A 2D ferroelectric beta-InSe/graphene heterostructure was fabricated by mechanical exfoliation, and the carrier dynamics crossing the heterostructure interface has been systematically investigated by Raman, photoluminescence, and transient absorption measurements. Due to the efficient interfacial photo excited electron transfer and photogating effect from trapped holes, the heterostructure devices demonstrate superior performance with a maximum responsivity of 2.12 x 104 A W-1, detectivity of 1.73 x 1014 Jones, and fast response time (241 mu s) under lambda = 532 nm laser illumination. Furthermore, the photo responses influenced by the ferroelectric polarization field are investigated. Our work confirms a ferroelectric beta-InSe/graphene heterostructure as an outstanding material platform for sensitive optoelectronic applications. (c) 2023 The Japan Society of Applied Physics