• 文献标题:   Systematic Investigation of the Intrinsic Channel Properties and Contact Resistance of Monolayer and Multilayer Graphene Field-Effect Transistor
  • 文献类型:   Article
  • 作  者:   NAGASHIO K, NISHIMURA T, KITA K, TORIUMI A
  • 作者关键词:  
  • 出版物名称:   JAPANESE JOURNAL OF APPLIED PHYSICS
  • ISSN:   0021-4922 EI 1347-4065
  • 通讯作者地址:   Univ Tokyo
  • 被引频次:   76
  • DOI:   10.1143/JJAP.49.051304
  • 出版年:   2010

▎ 摘  要

The intrinsic channel properties of monolayer and multilayer graphene were systematically investigated as a function of layer number by the exclusion of contact resistance using four-probe measurements. We show that the continuous change in normalized sheet resistivity from graphite to a bilayer graphene is governed by one unique property, i.e., the band overlap, which markedly increases from 1 meV for a bilayer graphene to 11 meV for eight layers and eventually reaches 40 meV for graphite. The monolayer graphene, however, showed a deviation in temperature dependence due to a peculiar linear dispersion. Additionally, contact resistivity was extracted for the case of typical Cr/Au electrodes. The observed high contact resistivity, which varies by three orders of magnitude (from similar to 10(3) to 10(6) Omega mu m), might significantly mask the outstanding performance of the monolayer graphene channel, suggesting its importance in future research. (C) 2010 The Japan Society of Applied Physics