▎ 摘　　要

Achieving strong adhesion between graphene and SiOx/Si substrates is crucial to make reliable graphene based electronics and electro-optic devices. We report the enhanced adhesion energy by vacuum annealing and the quantification of graphene-SiOx/Si substrate adhesion energy by using the nano-scratch technique coupled with Raman spectroscopy and x-ray photoelectron spectroscopy (XPS). We found that the adhesion energy of as-transferred graphene on SiOx/Si substrates is similar to 2.978 J m(-2). By applying different annealing protocols of rapid thermal annealing and vacuum annealing, the adhesion energy of graphene-SiOx/Si is increased to 10.09 and 20.64 J m(-2), respectively. The increase in adhesion energy is due to the formation of chemical bonds between the graphene and SiOx at high temperatures. The XPS depth profiling confirms that C-O and C=O chemical bond formation occurs at the graphene/SiOx interface. These results could be adapted for graphene/Si nanoelectronics device fabrication and they open up a pathway towards producing reliable solid state devices.