▎ 摘　　要

A Schottky UV photodetector based on graphene/ZnO:Al nanorod-array-film (AZNF) structure has been fabricated. Different from the previously reported graphene/ZnO photodetectors, this photodetector has a stable Schottky barrier which does not disappear under UV light. Thus, the UV photodetector can work as a high-performance self-powered device. The key to improve the stability of the Schottky barrier is a two-step surface treatment process. As a result, the self-powered photodetector exhibits a UV-to-visible rejection ratio of about 1 x 10(2), a responsivity of 0.039 A W1-, a short rise time of 37 mu s, and a decay time of 330 mu s. Furthermore, the photodetector is able to keep the responsivity under low light conditions. In comparison with the previously reported graphene/ZnO UV photodetectors, the photodetector exhibits a higher responsivity at zero bias and a faster response speed. This study provides a potential way to fabricate high-performance self-powered UV photodetectors.