▎ 摘　　要

Graphene antidot lattices have recently been proposed as a new breed of graphene-based superlattice structures. We study electronic properties of triangular antidot lattices, with emphasis on the occurrence of dispersionless (flat) bands and the ensuing electron localization. Apart from strictly flat bands at zero energy (Fermi level), whose existence is closely related to the bipartite lattice structure, we also find quasiflat bands at low energies. We predict the real-space electron density profiles due to these localized states for a number of representative antidot lattices. We point out that the studied low-energy localized states compete with states induced by the superlattice-scale defects in this system, which have been proposed as hosts for electron-spin qubits. Furthermore, we suggest that local moments formed in these midgap zero-energy states may be at the origin of a surprising saturation of the electron dephasing length observed in recent weak localization measurements in graphene antidot lattices.