▎ 摘　　要

Si quantum dots (SiQDs)-embedded SiO2 (SiQDs:SiO2) is highly attractive for photonic device applications due to advantages such as larger light absorption and faster photo-sensing than bulk Si. Here, we report (trifluoromethanesulfonyl)-amide (TFSA)-doped graphene (GR) (TFSA-GR)/p-type SiQDs:SiO2 (p-SiQDs:SiO2) heterojunction photodetectors (PDs) by using graphene quantum dots (GQDs) as an interlayer. The TFSA-GR/p-SiQDs:SiO2/n-Si PD exhibits a broadband photoresponse even at zero bias, meaning "self-powered", with a 0.36-0.67 A W-1 responsivity and an similar to 90% external quantum efficiency in the 4001000 nm wavelength range. By inserting GQDs as an interlayer between the TFSA-GR and p-SiQDs:SiO2, the PD shows a remarkable reduction in dark current (DC) due to the carrier blocking effect, resulting in an similar to 100 times' increase of the photocurrent (PC)/DC ratio and detectivity (similar to 10(6) and 4.50-8.35 x 10(12) cm Hz(1/2) W-1), respectively. The PC rise/decay times are also reduced to similar to 1.08/0.94 mu s from 1.22/1.46 mu s at 600 nm, respectively, by the interlayer. The PC/DC is almost consistent even after 1000 h under ambient conditions (25 degrees C temperature/30-35% relative humidity), indicating excellent stability.