• 文献标题:   Analysing quantized resistance behaviour in graphene Corbino p-n junction devices
  • 文献类型:   Article
  • 作  者:   LIU CI, SCALETTA DS, PATEL DK, KRUSKOPF M, LEVY A, HILL HM, RIGOSI AF
  • 作者关键词:   quantum hall effect, corbino geometry, graphene pn junction
  • 出版物名称:   JOURNAL OF PHYSICS DAPPLIED PHYSICS
  • ISSN:   0022-3727 EI 1361-6463
  • 通讯作者地址:   NIST
  • 被引频次:   2
  • DOI:   10.1088/1361-6463/ab83bb
  • 出版年:   2020

▎ 摘  要

Just a few of the promising applications of graphene Corbino pnJ devices include two-dimensional Dirac fermion microscopes, custom programmable quantized resistors, and mesoscopic valley filters. In some cases, device scalability is crucial, as seen in fields like resistance metrology, where graphene devices are required to accommodate currents of the order 100 mu A to be compatible with existing infrastructure. However, fabrication of these devices still poses many difficulties. In this work, unusual quantized resistances are observed in epitaxial graphene Corbino p-n junction devices held at the nu=2