▎ 摘　　要

Silicene nanoribbon is a one-dimensional structure of monolayer silicon atoms that its energy gap depends on the edge shape and the width of the ribbon. In this paper, we design a Silicene nanoribbon field effect transistor (SiNRFET) based on different ribbon widths and then we compare this structure with a graphene nanoribbon field effect transistor (GNRFET). For this purpose, we study the effect of the parameters such as ribbon length and the number of atoms along the ribbon width. Moreover, we investigate effect of the perpendicular electric field on the I-on/I-off and transfer characteristics of both structures and compare the performance of these transistors. Finally, we derive the output characteristics of SiNRFET and GNRFET as a function of gate voltage and compare them together. The method that we use in this research is the transfer matrix. The electron wave functions are derived in each region of both transistors in order to obtain the current.