▎ 摘　　要

Graphene films were directly grown on AlN substrates by chemical vapor deposition (CVD) via Ga remote catalyzation. The effects of growth temperature and catalyst distance on the growth, optical and electrical properties of graphene were studied. The results show that graphene films with thickness of about 5 layers can be prepared at 1070 degrees C and uniform thickness can be obtained within 1.4 cm around Ga. The optical and electrical properties of graphene were characterized by transmittance and square resistance. The results show that the transmittance of graphene film can reach more than 90% in the wavelength range of 400-800 nm, and the square resistance is about 230 Omega/square. First principles calculations results show that graphene remains metallic, and AlN substrate has adsorption doping effect on graphene, which can effectively reduce the square resistance of graphene and improve the electrical contact between graphene and substrate.