▎ 摘　　要

We studied the growth of Si at the surface of epitaxial graphene on 6H-SiC(0001). Characteristic flower-like islands with a thickness of 2 to 3 nm nucleated during the growth from 290 to 420 K. The islands became featureless in growth at higher temperatures. The growth was predominantly governed by diffusion-limited aggregation. The diffusion energy was evaluated to be 0.21 eV from the temperature-dependent decrease in the density of the islands. (C) 2016 The Japan Society of Applied Physics