• 文献标题:   Semiconductor to metal transition by tuning the location of N-2(AA) in armchair graphene nanoribbons
  • 文献类型:   Article
  • 作  者:   CHEN T, LI XF, WANG LL, LI Q, LUO KW, ZHANG XH, XU L
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF APPLIED PHYSICS
  • ISSN:   0021-8979 EI 1089-7550
  • 通讯作者地址:   Hunan Univ
  • 被引频次:   11
  • DOI:   10.1063/1.4863638
  • 出版年:   2014

▎ 摘  要

The electronic band structures and transport properties of N-2(AA)-doped armchair graphene nanoribbons (aGNRs) with two quasi-adjacent substitutional nitrogen atoms incorporated in pairs of neighboring carbon atoms in the same sublattice A are investigated by using non-equilibrium Green function formalism in combination with density functional theory. The results show that the coupling effect between the Pz orbitals of carbon and nitrogen atoms plays an important role in the transition between semiconductor and metal by different locations of N-2(AA)-doped aGNRs. And the striking negative differential resistance behaviors can be found in such devices. These tremendous properties suggest potential application of N-2(AA)-doped aGNRs in graphene-based nanoelectronic devices. (C) 2014 AIP Publishing LLC.