• 文献标题:   Electrostatic deposition of graphene
  • 文献类型:   Article
  • 作  者:   SIDOROV AN, YAZDANPANAH MM, JALILIAN R, OUSEPH PJ, COHN RW, SUMANASEKERA GU
  • 作者关键词:  
  • 出版物名称:   NANOTECHNOLOGY
  • ISSN:   0957-4484 EI 1361-6528
  • 通讯作者地址:   Univ Louisville
  • 被引频次:   98
  • DOI:   10.1088/0957-4484/18/13/135301
  • 出版年:   2007

▎ 摘  要

Loose graphene sheets, one to a few atomic layers thick, are often observed on freshly cleaved HOPG surfaces. A straightforward technique using electrostatic attraction is demonstrated to transfer these graphene sheets to a selected substrate. Sheets from one to 22 layers thick have been transferred by this method. One sheet after initial deposition is measured by atomic force microscopy to be only an atomic layer thick (similar to 0.35 nm). A few weeks later, this height is seen to increase to similar to 0.8 nm. Raman spectroscopy of a single layer sheet shows the emergence of an intense D band which dramatically decreases as the number of layers in the sheet increase. The intense D band in monolayer graphene is attributed to the graphene conforming to the roughness of the substrate. The disruption of the C-C bonds within the single graphene layer could also contribute to this intense D band as evidenced by the emergence of a new band at 1620 cm(-1).