• 文献标题:   Abrupt changes in the graphene on Ge(001) system at the onset of surface melting
  • 文献类型:   Article
  • 作  者:   PERSICHETTI L, DI GASPARE L, FABBRI F, SCAPARRO AM, NOTARGIACOMO A, SGARLATA A, FANFONI M, MISEIKIS V, COLETTI C, DE SETA M
  • 作者关键词:   graphene, germanium, catalysi, chemical vapor deposition, scanning tunneling microscopy
  • 出版物名称:   CARBON
  • ISSN:   0008-6223 EI 1873-3891
  • 通讯作者地址:   Univ Roma Tre
  • 被引频次:   7
  • DOI:   10.1016/j.carbon.2019.01.043
  • 出版年:   2019

▎ 摘  要

By combining scanning probe microscopy with Raman and x-ray photoelectron spectroscopies, we investigate the evolution of CVD-grown graphene/Ge(001) as a function of the deposition temperature in close proximity to the Ge melting point, highlighting an abrupt change of the graphene's quality, morphology, electronic properties and growth mode at 930 degrees C. We attribute this discontinuity to the incomplete surface melting of the Ge substrate and show how incomplete melting explains a variety of diverse and long-debated peculiar features of the graphene/Ge(001), including the characteristic nanostructuring of the Ge substrate induced by graphene overgrowth. We find that the quasi-liquid Ge layer formed close to 930 degrees C is fundamental to obtain high-quality graphene, while a temperature decrease of 10 degrees already results in a wrinkled and defective graphene film. (c) 2019 Elsevier Ltd. All rights reserved.