▎ 摘　　要

By using near-equilibrium chemical vapor deposition, it is demonstrated that high-quality single-crystal graphene can be grown on dielectric substrates. The maximum size is about 11 mu m. The carrier mobility can reach about 5650 cm(2) V-1 s(-1), which is comparable to those of some metal-catalyzed graphene crystals, reflecting the good quality of the graphene lattice.