▎ 摘　　要

We present a modified argon-assisted (MAA) epitaxial method to grow epitaxial graphene in a relative closed sample chamber with several pinholes punched on the top of the chamber to ensure more homogeneous distributions of temperature and gas flow. The morphology and structure of modified argon-assisted epitaxial graphene (MAA-EG) films grown on 6H-SiC (0001) substrates were investigated. The results reveal that the domain size of MAA-EG is much larger and the corresponding terraces are much more regular than those of EG by conventional argon-assisted epitaxial graphene (AA-EG). Moreover, it demonstrates that the growth of MAA-EG is much more controllable and the corresponding growth rate is much lower, compared to those of AA-EG. It is promising to use MAA to grow EG with large domain size and high crystalline quality. (C) 2013 Elsevier B.V. All rights reserved.