▎ 摘　　要

The design of electrochemically gated graphene field-effect transistors for detecting charged species in real time, greatly depends on our ability to understand and maintain a low level of electrochemical current. Here, we exploit the interplay between the electrical in-plane transport and the electrochemical activity of graphene. We found that the addition of one H-sp(3) defect per hundred thousand carbon atoms reduces the electron transfer rate of the graphene basal plane by more than five times while preserving its excellent carrier mobility. Remarkably, the quantum capacitance provides insight into the changes of the electronic structure of graphene upon hydrogenation, which predicts well the suppression of the electrochemical activity based on the non-adiabatic theory of electron transfer. Thus, our work unravels the interplay between the quantum transport and electrochemical kinetics of graphene and suggests hydrogenated graphene as a potent material for sensing applications with performances going beyond previously reported graphene transistor-based sensors.