• 文献标题:   Perfect switching of the spin polarization in a ferromagnetic gapless graphene/superconducting gapped graphene junction
  • 文献类型:   Article
  • 作  者:   SOODCHOMSHOM B, TANG IM, HOONSAWAT R
  • 作者关键词:   gapped graphene, specular andreev reflection, spin transport, massive dirac electron, ferromagnet/superconductor junction
  • 出版物名称:   PHYSICA CSUPERCONDUCTIVITY ITS APPLICATIONS
  • ISSN:   0921-4534 EI 1873-2143
  • 通讯作者地址:   Mahidol Univ
  • 被引频次:   7
  • DOI:   10.1016/j.physc.2009.09.011
  • 出版年:   2010

▎ 摘  要

With the fabrication of gapped graphene, interest in the tunneling spectroscopy in graphene-based FG/SG junctions in which one side consists of a gapless ferro-magnetic graphene (FG) and the other side, of a gapped superconducting graphene (SG) has arisen. The carriers in the gapless (gapped) graphene are 2D relativistic particles having an energy spectrum given by E = root h2 nu(2)(F)k(2) + (m nu(2)(F) (where m nu(2)(F) is the gap and nu(F) is the Fermi velocity). The spin currents in this FG/SG junction are obtained within the framework of the extended Blonder-Tinkham-Klapwijk (BTK) formalism. The effects of the superconducting energy gap in SC, of the gap m nu(2)(F), which opened in the superconducting graphene, of the exchange field in FG, of the spin-dependent specular Andreev reflection, of the effective Fermi energy (E-FF) of FG and of the bias voltage across the junction (V) are simulated. It is seen that by adjusting E-FF or V, the spin polarization (defined as SP(%) = 100% x (G(up arrow) - G(down arrow))/(G(up arrow) + G(down arrow))) can be switched from a pure spin up (SP = +100%) state to pure spin down (SP = -100%) state. (C) 2009 Elsevier B.V. All rights reserved.