• 文献标题:   Phonon-induced linewidths of graphene electronic states
  • 文献类型:   Article
  • 作  者:   HELLSING B, FREDERIKSEN T, MAZZOLA F, BALASUBRAMANIAN T, WELLS JW
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:   Univ Basque Country
  • 被引频次:   0
  • DOI:   10.1103/PhysRevB.98.205428
  • 出版年:   2018

▎ 摘  要

The linewidths of the pi and sigma bands originating from the electron-phonon coupling in graphene are analyzed based on model calculations and experimental angle-resolved photoemission spectroscopy (ARPES) data. We find evidence for crucial contributions to the lifetime broadening from interband scattering pi -> sigma and sigma -> pi, respectively, driven by the out-of-plane ZA acoustic phonons. The essential features of the calculated s band linewidths are in agreement with recent published ARPES data [Mazzola et al., Phys. Rev. B 95, 075430 (2017)] and of the pi band linewidth with ARPES data presented here.