▎ 摘　　要

The transport properties of CVD graphene-based field-effect transistors (GFETs) before and after introducing high-k dimethyl sulfoxide (DMSO) were investigated. The results show that after introducing DMSO, the performance of GFETs was significantly improved: the maximum drain current I-Dmax, the maximum transconductance g(mmax), and the field-effect mobility increase by 2.5, 24, and 23 times, respectively. The mechanism for the performance enhancement by high-k dielectric was analyzed by Raman spectroscopy and transport measurements, and both are consistent with each other.