▎ 摘　　要

We demonstrate conductive templating inter layers of graphene ink, integrating the electronic and chemical properties of graphene in a solution-based process relevant for scalable manufacturing. Thin films of graphene ink are coated onto ITO, following thermal annealing, to form a percolating network used as interlayer. We employ a benchmark n-type semiconductor, C-60, to study the interface of the active layer/interlayer. On bare ITO, C-60 molecules form films of homogeneously distributed grains; with a graphene interlayer, a preferential orientation of C-60 molecules is observed in the individual graphene plates. This leads to crystal growth favoring enhanced charge transport. We fabricate devices to characterize the electron injection and the effect of graphene on the device performance. We observe a significant increase in the current density with the interlayer. Current densities as high as similar to 1 mA/cm(2) and similar to 70 mA/cm(2) are realized for C-60 deposited with the substrate at 25 degrees C and 150 degrees C, respectively.