• 文献标题:   Turning free-standing three-dimensional graphene into electrochemically active by nitrogen doping during chemical vapor deposition process
  • 文献类型:   Article
  • 作  者:   MA YX, WU XK, YU M, LI SM, LIU JH
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF MATERIALS SCIENCEMATERIALS IN ELECTRONICS
  • ISSN:   0957-4522 EI 1573-482X
  • 通讯作者地址:   Beihang Univ
  • 被引频次:   0
  • DOI:   10.1007/s10854-019-02740-9
  • 出版年:   2020

▎ 摘  要

By chemical vapor deposition on nanometer-size copper nanopowder sinter template with ammonia as nitrogen source, a free-standing N-doped three-dimensional graphene (N3DG) with macro-meso-micro-hierarchical porous structure was prepared. The existence of nitrogen-containing groups in N3DG turned inert graphene into electrochemically active. The flow ratio between methane and ammonia significantly influences the chemical environment of as-doped nitrogen atoms, the structure of defects in graphene, as well as the electrochemical performance. With the flow ratio between methane and ammonia of 1:4, the specific capacitance of N3DG could be as high as 558.9 F g(- 1). The areal capacitance is 4.26 F m(- 2).