▎ 摘　　要

In this study, we propose and demonstrate a broadband polarization-independent terahertz modulator based on graphene/silicon hybrid structure through a combination of continuous wave optical illumination and electrical gating. Under a pump power of 400 mW and the voltages ranging from -1.8 V to 1.4 V, modulation depths in a range of -23%-62% are achieved in a frequency range from 0.25 THz to 0.65 THz. The modulator is also found to have a transition from unidirectional modulation to bidirectional modulation with the increase of pump power. Combining the Raman spectra and Schottky current-voltage characteristics of the device, it is found that the large amplitude modulation is ascribed to the electric-field controlled carrier concentration in silicon with assistance of the graphene electrode and Schottky junction.