• 文献标题:   Epitaxial growth of boron-doped graphene by thermal decomposition of B4C
  • 文献类型:   Article
  • 作  者:   NORIMATSU W, HIRATA K, YAMAMOTO Y, ARAI S, KUSUNOKI M
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF PHYSICSCONDENSED MATTER
  • ISSN:   0953-8984 EI 1361-648X
  • 通讯作者地址:   Nagoya Univ
  • 被引频次:   17
  • DOI:   10.1088/0953-8984/24/31/314207
  • 出版年:   2012

▎ 摘  要

We grew graphene by thermal decomposition of B4C and investigated its features by high-resolution transmission electron microscope observations. At temperatures higher than 1600 degrees C in a vacuum, B4C decomposes and graphene forms epitaxially on its surface. The number and the morphology of the graphene layers depend on the surface orientation. An electron diffraction technique revealed the presence of a superstructure with a two-times larger unit cell, which is consistent with the structure of BC3. We have directly confirmed boron in the graphene layers by electron energy loss spectroscopy measurements and boron-mapping experiments.