• 文献标题:   Laser-assisted selective lithography of reduced graphene oxide for fabrication of graphene-based out-of-plane tandem microsupercapacitors with large capacitance
  • 文献类型:   Article
  • 作  者:   KWON S, JUNG D, LIM H, KIM G, CHOI KB, LEE J
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Korea Inst Machinery Mat
  • 被引频次:   4
  • DOI:   10.1063/1.4997954
  • 出版年:   2017

▎ 摘  要

We present a laser lithography technique that uses a focused laser beam to fabricate out-of-plane tandem microsupercapacitors (MSCs) from reduced graphene oxide (rGO) with large areal capacitance. By controlling the depth of focus in a laser beam focused by an objective lens during laser lithography on a graphene oxide (GO) film, a rGO/GO/rGO structure is formed in the GO film, and subsequently, two independent interdigitated electrodes (IDEs) were fabricated on the top and bottom surfaces of the GO film. The out-of-plane tandem MSC with a parallel assembly of two rGO-IDEs showed two times larger areal capacitance than an in-plane single MSC with one rGO-IDE in the same MSC device footprint. The laser-assisted selective lithography technique using a focused laser beam developed in this study can be further applied to improve the energy density of MSCs without increasing the electrode area by vertically stacking multiple out-of-plane tandem IDEs. Published by AIP Publishing.