▎ 摘　　要

From chemical vapor deposition grown film to nanoscale lithographic devices, etching is a critical procedure to define two-dimensional (2D) materials' geometry and edge type. Many reported etching procedures could potentially damage the activity of the edge, while a living edge is capable to heal and regrow back. Here we successfully demonstrated a continuous growth-etching-regrowth procedure to achieve the precise lateral control of graphene basal plane. The etching process leaves graphene with dominant zigzag edges. Up to 85% of the new graphene domains can be regrown from the living edges, replicating the graphene's crystallographic orientation before the etching. At 1050 degrees C, the etching and regrowth can be linearly controlled at a rate of -2.7 mu m/min and 2.4 mu m/min, respectively. This represents a promising technique for precisely tailoring the lateral structure of graphene with selective edge type. (C) 2020 Elsevier Ltd. All rights reserved.