▎ 摘　　要

In this paper, we propose and analyze a graphene tunnelling field effect transistor (GTFET) with a gapped graphene in the channel and gapless graphene in the source/drain regions. Moreover, we compare the performance of this structure with two other monolayer graphene based tunnelling field-effect transistors (GFETs) including gapless and finite band gap graphene across the source, channel and drain regions. We find that the I-on/I-off ratio in the proposed structure shows a significant promotion compared with two other structures and reaches to 105. Then we investigate the effect of four parameters: doping concentration, drain voltage, dielectric thickness and work function difference between the channel and the gate electrode in the proposed GTFET. It is shown that the ON current and therefore the I-on/I-off ratio in the proposed structure can be improved by increase of the doping concentration. We also compared the analog performance parameters including the transconductance g(m), output conductance g(d) and voltage gain A(v) for all three simulated devices. The obtained results show that the proposed GTFET is suitable for analog applications. (C) 2016 Elsevier Ltd. All rights reserved.