• 文献标题:   Bilayer Graphene Transistors for Analog Electronics
  • 文献类型:   Article
  • 作  者:   FIORI G, NEUMAIER D, SZAFRANEK BN, IANNACCONE G
  • 作者关键词:   current saturation, frequency doubler, graphene, graphene amplifier, negf
  • 出版物名称:   IEEE TRANSACTIONS ON ELECTRON DEVICES
  • ISSN:   0018-9383 EI 1557-9646
  • 通讯作者地址:   Univ Pisa
  • 被引频次:   25
  • DOI:   10.1109/TED.2014.2302382
  • 出版年:   2014

▎ 摘  要

In this paper, we investigate with theory and experiments the performance improvements achievable using bilayer graphene as channel material in field effect transistors for analog applications. Bilayer graphene provides larger output resistance than monolayer graphene, which translates in both higher voltage gain and higher maximum frequency oscillation. To experimentally prove bilayer graphene potential as a channel material, simple circuits have been fabricated and tested, i.e., an amplifier and a frequency doubler. We show that they largely outperform similar circuits built with monolayer-graphene devices.